WebEECS 141: FALL 2010 – MIDTERM 1 5/8 d) (8 pts) Now design a decoder that is optimized for a 16x16 SRAM array. You can use whatever gates you’d like to, but your input … WebEECS Dept. Info University of California, Berkeley (UC Berkeley)'s EECS department has 68 courses in Course Hero with 6776 documents and 417 answered questions. ... EECS 141 38 Documents; EECS 149 63 Documents; 1 Q&A; EECS 151 137 Documents; 7 Q&As; EECS 156 1 Document; EECS 182 28 Documents; 1 Q&A; EECS 201 ...
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WebEECS 141: FALL 2005—FINAL 1 University of California College of Engineering Department of Electrical Engineering and Computer Sciences D. Markovic TuTh 11-12:30 … WebEECS 141: FALL 2010 – FINAL EXAM 3/12 PROBLEM 2: SRAM Design (18 pts) For this problem we will be looking at a 128x128 SRAM (i.e., each wordline drives 128 cells, and each bitline has 128 cells on it), with each cell shown below. The cell’s layout is 2µm tall and 2.5µm wide, and both the wordline and bitline wires are 0.1µm wide. cannula associated phlebitis
EECS 141: FALL 2007—FINAL EXAM - University of California, …
WebEECS 141: FALL 2008 – FINAL EXAM 4/17 PROBLEM 2: SRAM Design (14 points) For this problem you should use the velocity saturated transistor model. a) (8 pts) Shown below is an SRAM cell during a read, where the power supply of the SRAM has been reduced to 0.65V while the V DD of the wordline is 1.2V. WebEECS 141: FALL 2007 – MIDTERM 1 3/9 b) (3 pts) Please draw the VTC of a p dynamic inverter as its input is swept from VDD to 0V. Remember that the output of a p inverter is … http://bwrcs.eecs.berkeley.edu/Classes/icdesign/ee141_f11/Discussion/ee141_final_review_fa11_soln.pdf flag football set plays